CMPSH-3CE TR PBFREE

CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E series devices are enhanced versions of the CMPSH-3 series of silicon Schottky diodes in an SOT-23 surface mount package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100mA MAX to 200mA MAX SOT-23 CASE CMPSH-3E: CMPSH-3AE: CMPSH-3CE: CMPSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25°C) ♦ BVR from 30V MIN to 40V MIN ♦ VF from 1.0V MAX to 0.8V MAX MARKING MARKING MARKING MARKING VRRM IF Peak Repetitive Forward Voltage IFRM IFSM Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR ♦ BVR VF ♦ VF ♦ VF ♦♦ VF CJ trr D95E DB1E DB2E DA5E SYMBOL ♦ Peak Repetitive Reverse Voltage ♦ Continuous Forward Current Forward Surge Current, tp=10ms CODE: CODE: CODE: CODE: PD TJ, Tstg ΘJA UNITS 40 V 200 mA 350 mA 750 mA 350 mW -65 to +150 °C 357 °C/W CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX VR=25V 90 500 VR=25V, TA=100°C 25 100 IR=100μA 40 50 IF=2.0mA 0.29 0.33 IF=15mA 0.37 0.42 IF=100mA 0.51 0.80 IF=200mA 0.65 1.0 VR=1.0V, f=1.0MHz 7.0 IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS nA μA V V V V V pF ns ♦ Enhanced specification. ♦♦ Additional Enhanced specification. R4 (16-February 2016) CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATIONS CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE LEAD CODE: 1) Anode 2) No Connection 3) Cathode LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: D95E MARKING CODE: DB1E MARKING CODE: DB2E MARKING CODE: DA5E R4 (16-February 2016) w w w. c e n t r a l s e m i . c o m CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES TYPICAL ELECTRICAL CHARACTERISTICS R4 (16-February 2016) w w w. c e n t r a l s e m i . c o m CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES TYPICAL ELECTRICAL CHARACTERISTICS R4 (16-February 2016) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)